HM4453B

HM4453B P-Channel Enhancement Mode Power MOSFET Description The HM4453B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -12V,ID = -9A RDS(ON) < 45mΩ @ VGS=-2.5V RDS(ON) < 30mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management D G S Schematic diagram HM4453B Marking and pin Assignment SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package HM4453B HM4453B SOP-8 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current -Continuous Drain Current -Pulsed (Note 1) Maximum Power Dissipatio...