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HM9435B Dataheets PDF



Part Number HM9435B
Manufacturers H&M Semiconductor
Logo H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Datasheet HM9435B DatasheetHM9435B Datasheet (PDF)

HM9435B P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM9435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -5A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram HM9435B M.

  HM9435B   HM9435B



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HM9435B P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM9435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -5A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram HM9435B Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package HM9435B HM9435B SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current -Pulsed (Note 1) IDM Maximum Power .


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