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HM4435

P-Channel Enhancement Mode Power MOSFET

Description

HM4435 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is a...

H&M Semiconductor

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