Document
HM4435B
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM4435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
GENERAL FEATURES
● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 22mΩ @ VGS=-10V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
D G
S Schematic diagram
4435B
Marking and pin Assignment
Application
●Battery Switch ●Load switch ●Power management
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
4435B
HM4435B
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Ther.