DatasheetsPDF.com

HM4435B Dataheets PDF



Part Number HM4435B
Manufacturers H&M Semiconductor
Logo H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Datasheet HM4435B DatasheetHM4435B Datasheet (PDF)

HM4435B P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 22mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram 4435B Marking and pin Assignment Application ●Battery Switch ●Load switch ●Power.

  HM4435B   HM4435B


Document
HM4435B P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 22mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram 4435B Marking and pin Assignment Application ●Battery Switch ●Load switch ●Power management SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package 4435B HM4435B SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Ther.


HM4435 HM4435B HM4407


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)