P-Channel Enhancement Mode Power MOSFET
M
P-Channel Enhancement Mode Power MOSFET
Description
The HM4407 uses advanced trench technology to provide excellent ...
Description
M
P-Channel Enhancement Mode Power MOSFET
Description
The HM4407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
● VDS = -30V,ID = -12A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 16mΩ @ VGS=-10V
● High Power and current handing capability ● Lead free product is acquired ● Surface mount package
Application
●PWM applications ●Load switch ●Power management
D G
S Schematic diagram
HM
Marking and pin Assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
HM4407
HM4407
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous Drain Current-Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
PD...
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