HM4487A

HM4487A P-Channel Enhancement Mode Power MOSFET Description The HM4487A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. D G General Features ● VDS =-100V,ID =-7.5A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VGS=-4.5V (Typ:48mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance S Schematic diagram HM4487A Application ● Power management in notebook computer ● Portable equipment and battery powered systems Marking and pin Assignment 100% UIS TESTED! 100% ∆Vds TESTED! SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package HM4487A HM4487A SOP8 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source ...