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HM5853
P-Channel Enhancement Mode MOSFET with Schottky Diode
Features
Pin configuration
P-Channel
Top v...
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HM5853
P-Channel Enhancement Mode MOSFET with
Schottky Diode
Features
Pin configuration
P-Channel
Top view
VDS VGS RDSON Typ. ID
130mR@-4V5
-20V
±8V
170mR@-2V5 -2A
230mR@-1V8
Schottky
VR
IR
VF Typ.
IO
20V
15uA 410mV @0.5A 1A
Description HM5853 combines an PChannel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage
schottky diode. The tiny and thin outline saves PCB consumption.
Applications Li-Battery Charging High Side DC/DC Converter High Side Driver for Brushless
DC motor Power Management in Portable,
Battery Powered Devices
Bottom View
JA
Marking
Ordering Information
Device HM5853
Package Shipping DFN3X2 3000/Reel
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Absolute Maximum Ratings(TA=25℃ unless otherwise noted)
Symbol
Parameter
Ratings Unit
P-MOS
VDSS
Drain-to-Source Voltage
-20
V
VGSS
Gate-to-Source Voltage
±8
V
ID
Continuous Drain Current
-2
A
IDM
Pulsed Drain Current
-8
A
Schottky Diode
VR
Schottky Reverse Voltage
20
V
IF
Schottky Continuous Forward Current
1
A
Power Dissipation and Temperature
PD
Power Dissipation
2.2
W
TJ
Operation junction temperature
-55 to 150
℃
TSTG
Storage temperature range
-55 to 150
℃
Thermal Resistance Ratings(TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
RθJA
Junction-to-Ambient Thermal Resistance
59
Unit
℃/W
Electronics Characteristics(TA=25℃ unless otherwise noted)
Symbol
Parameter
Te...