HM08P12D

DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS HM08P12D P-Channel MOSFET V(BR)DSS -12V RDS(on)MAX 28mΩ@-4.5V 32mΩ@-3.7V 40mΩ@-2.5V 63mΩ@-1.8V 150mΩ@-1.5V ID -8A DFNWB2×2-6L-J FEATURE  Advanced trench MOSFET process technology  Ultra low on-resistance with low gate charge APPLICATION  PWM application  Load switch  Battery charge in cellular handset MARKING: Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID IDM* RθJA Tj TSTG *Repetitive rating：Pluse width limited by junction temperature. Value -12 ±8 -8 -28 357 150 -55 ~+150 Unit V A ℃/W ℃ 026)(7(/(&75,&$/&+$5$&7(5,67,&6 Ta=25 Я unless otherwise specified Parameter Symbol Test Condition Static Characteristics Drain-source breakdown voltage Zero gate voltage dra...