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HM4853

H&M Semiconductor

P-Channel Enhancement Mode Power MOSFET

+0 P-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology to provide ex...


H&M Semiconductor

HM4853

File Download Download HM4853 Datasheet


Description
+0 P-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D1 G1 G2 D2 S1 S2 Schematic diagram General Features ● VDS = -20V,ID = -9A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.5V ● High power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Motor drive ● Load switch ● Power management +0 Marking and pin assignment SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package +0 +0 SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM...




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