Dual P-Channel Enhancement Mode Power MOSFET
HM4813
Dual P-Channel Enhancement Mode Power MOSFET
Description
The HM4813 uses advanced trench technology to provide ...
Description
HM4813
Dual P-Channel Enhancement Mode Power MOSFET
Description
The HM4813 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
● VDS = -30V,ID = -7A RDS(ON) < 70mΩ @ VGS=-4.5V RDS(ON) < 42mΩ @ VGS=-10V
D1 G1
G2
D2
S1 S2
Schematic diagram
HM4813
● High Power and current handing capability ● Lead free product is acquired ● Surface mount package
Marking and pin Assignment
Application
●PWM applications ●Load switch ●Power management
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
HM4813
HM4813
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous Drain Current-Pulsed (Note 1)
ID IDM
...
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