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HM4821

Dual P-Channel Enhancement Mode Power MOSFET

Description

HM4821 Dual P-Channel Enhancement Mode Power MOSFET Description The HM4821 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. G1 D1 G2 D2 General Features ● VDS =-60V,ID =-6.5A RDS(ON) <45mΩ @ VGS=-10V ● High density cell design for ultra low Rdso...

H&M Semiconductor

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