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HM6801

Dual P-Channel Enhancement Mode Power MOSFET

Description

HM6801 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -2.5A RDS(ON) < 130mΩ @ VGS=-10V RDS(ON) < 180mΩ...

H&M Semiconductor

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