HM%
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N P MOS
N-CH VDS= 40V RDS(ON), Vgs@10V, [email protected] = 31mΩ RDS(ON...
HM%
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N P MOS
N-CH VDS= 40V RDS(ON), Vgs@10V,
[email protected] = 31mΩ RDS(ON),
[email protected],
[email protected]= 45mΩ
P-CH VDS= - 40V RDS(ON), Vgs@-10V,
[email protected] = 45mΩ RDS(ON),
[email protected],
[email protected] = 63mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM
Package Dimensions
4614B
REF.
A B C D E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
0° 8°
0.40
0.90
0.19
0.25
REF.
M H L J K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) 25 oC
Parameter
Symbol
Ratings
N-
P-
Unit
Drain-Source Voltage
VDS
40...
