HM6602

HM6602 N and P-Channel Enhancement Mode Power MOSFET Description The HM6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a Battery protection or in other Switching application. General Features ● N-Channel VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58mΩ @ VGS=10V ● P-Channel VDS = -30V,ID = -2.5A RDS(ON) < 130mΩ @ VGS=-10V RDS(ON) < 180mΩ @ VGS=-4.5V D1 D2 G1 S1 N-channel G2 S2 P-channel Schematic diagram G1 1 S2 2 G2 3 6 D1 5 S1 4 D2 Marking and pin Assignment ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●PWM applications ●Load switch ●Power management SOT-23-L top view Package Marking and Ordering Information Device Marking Device Device Package HM6602 HM6602 SOT-23-6L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter...