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HM2302E

N-Channel Enhancement Mode Power MOSFET

Description

N-Channel Trench Power MOSFET General Description The HM2302E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features ● VDS = 15V,ID =2.0A RDS(ON) < 55mΩ @ VGS =4.5V RDS(ON) <85mΩ @ VGS =2....

H&M Semiconductor

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