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HM2302DR

H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET


Description
.3*8 1&KDQQHO9 '6 026)(7 GENERAL DESCRIPTION The HM2302DR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery...



H&M Semiconductor

HM2302DR

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