HM2302KR

HM2302KR N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2302KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram 3D 2302 G1 2S Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT-323 top view Package Marking And Ordering Information Device Marking Device Device Package 2302 HM2302KR SOT-323 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulse...