.3(98
1&KDQQHO9 '6 026)(7
GENERAL DESCRIPTION
The HM2302BSR is the N-Channel logic enhancement mode power fi...
.3(98
1&KDQQHO9 '6 026)(7
GENERAL DESCRIPTION
The HM2302BSR is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ●
FEATURES
● RDS(ON)= 270 mΩ @VGS=4.5V ● RDS(ON)= 330 mΩ @VGS=2.5V ● RDS(ON)= 450 mΩ @VGS=1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability ● Capable doing Cu wire bonding
DSC
1&KDQQHO
3D
2302
G1
2S
Marking and pin Assignment
SOT-523 top view
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage
Symbol VDS VGS
Maximum Ratings
20 ±8
Unit V V
* Th Nov, 2013-Ver1.0
Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com
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