N-Channel Enhancement Mode Power MOSFET
HM2300
N-Channel Enhancement Mode Power MOSFET
Description
The HM2300 uses advanced trench technology to provide excell...
Description
HM2300
N-Channel Enhancement Mode Power MOSFET
Description
The HM2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
General Features
● VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
D G
S Schematic diagram
2300
Marking and pin assignment
Application
●Battery protection ●Load switch ●Power management
SOT-23/ top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2300
HM2300
SOT-23-3L
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TA =25℃ TA =70℃
ID
Drain Current-...
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