HM2300PR

HM2300PR N-Channel Enhancement Mode Power MOSFET Description The HM2300PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. General Features ● VDS = 20V,ID = 5.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Battery protection ●Load switch ●Power management D G S Schematic diagram  HM2300PR Package Marking and Ordering Information Device Marking Device Device Package HM2300PR HM2300PR SOT-89-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA =25℃ TA =70℃ ID Drain Current-Pulsed (Note 1) IDM Maximum Po...