HM2312

HM2312 N-Channel Enhancement Mode Power MOSFET Description The HM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. General Features ● VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D G S Schematic diagram 2312 Marking and pin assignment Application ●Battery protection ●Load switch ●Power management SOT-23/ top view Package Marking and Ordering Information Device Marking Device Device Package 2312 HM2312 SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA =25℃ TA =70℃ ID Drain Current-...