N-Channel Enhancement Mode Power MOSFET
+03400%
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The +03400% uses advanced trench technology to provide ex...
Description
+03400%
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The +03400% uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES
● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V
D
G
S Schematic diagram
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications ●Load switch ●Power management
SOT-23 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
3400 +03400%
SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
...
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