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HM3400C

H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET

+0& N-Channel Enhancement Mode Power MOSFET Description The +0& uses advanced trench technology to provide ex...


H&M Semiconductor

HM3400C

File Download Download HM3400C Datasheet


Description
+0& N-Channel Enhancement Mode Power MOSFET Description The +0& uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58mΩ @ VGS=10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Battery protection ● Load switch ● Power management D G S Schematic diagram $7 Marking and pin assignment SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package $7+0& SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operatin...




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