N-Channel Enhancement Mode Power MOSFET
+0&
N-Channel Enhancement Mode Power MOSFET
Description
The +0& uses advanced trench technology to provide ex...
Description
+0&
N-Channel Enhancement Mode Power MOSFET
Description
The +0& uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.
General Features
● VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58mΩ @ VGS=10V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Application
● Battery protection ● Load switch ● Power management
D G
S Schematic diagram
$7
Marking and pin assignment
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
$7+0&
SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operatin...
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