HM3414

HM3414 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram 3D 3414 G1 2S Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT-23/ top view Package Marking And Ordering Information Device Marking Device Device Package 3414 HM3414 SOT-23/ Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed ...