HM7002B

N-Channel Enhancement Mode MOSFET ejTMMO Feature 60V/0.2A, R DS(ON) = 7.5Ω(MAX) @V GS = 10V. Id = 0.A RDS(ON) = 7.5Ω(MAX) @V GS = 5V . Id = 0.05A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. Applications ● Power Management in Desktop Computer or DC/DC Converters . SOT-23 1. GATE 2. SOURCE 3. DRAIN Absolute Maximum Ratings TA=25℃ Unless Otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous P o w er Dissip atio n ID PD T herm al R esistance f ro m J unction to Am b ient J unctio n T em p erature Sto rage T em p erature R θJA TJ Tstg Electrical Characteristics TA=25℃ Unless Otherwise noted Parameter Symbol Test Conditions Off Characteristics Drain to Source Breakdown Voltage BVDSS ==VGS 0V, ID 250µA Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0V Gate Body Leakage Current, Forward IGSSF VGS=20V, VDS=0V Gate Body Leakage Curr...