DatasheetsPDF.com

HM2310PR

H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET

M Description The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ...


H&M Semiconductor

HM2310PR

File Download Download HM2310PR Datasheet


Description
M Description The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =60V,ID =4.0A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Battery switch ●DC/DC converter D G S Schematic diagram SOT-89 -3L top view Package Marking and Ordering Information Device Marking Device Device Package HM2310PR HM2310PR SOT-89-3L Reel Size Ø180mm Tape width 12mm Quantity 1000units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Lim...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)