N-Channel Enhancement Mode Power MOSFET
M
Description
The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ...
Description
M
Description
The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application.
General Feature
● VDS =60V,ID =4.0A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.5V
● High Power and current handing capability ● Lead free product is acquired ● Surface mount package
Application
●Battery switch ●DC/DC converter
D G
S Schematic diagram
SOT-89 -3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
HM2310PR
HM2310PR
SOT-89-3L
Reel Size Ø180mm
Tape width 12mm
Quantity 1000units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Lim...
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