HM3422

HM3422 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram 22AM Marking and pin Assignment Application ●Battery Switch ●DC/DC Converter SOT-23 -3L top view Package Marking And Ordering Information Device Marking Device Device Package 22AM HM3422 SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipat...