N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET
Description
The HM3N10PR uses advanced trench technology and design to provide e...
Description
N-Channel Enhancement Mode Power MOSFET
Description
The HM3N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 100V,ID = 3A RDS(ON) <240mΩ @ VGS=10V (Typ:210mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
e PkNMmo
D G
S Schematic diagram
SOT-89-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
HM3N10PR
HM3N10PR
SOT-89-3L
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous Drain Current-Pulsed (Note 1)
ID IDM
Maximum Power Dis...
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