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HM4402A

H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET

Description The +0$ uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It...


H&M Semiconductor

HM4402A

File Download Download HM4402A Datasheet


Description
Description The +0$ uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =A RDS(ON) <5.5mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM application ● Load switch H3' Schematic diagram 3' Marking and pin Assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package HM4402$ HM4402$ SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 20 ±1  75 3 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,...




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