HM4412A

HM4412A N-Channel Enhancement Mode Power MOSFET Description The HM4412A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. Genera Features ● VDS = 30V,ID = 7.0A RDS(ON) < 31mΩ @ VGS=10V RDS(ON) < 43mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Load switch ●PWM application D G S Schematic diagram 4412A Marking and pin Assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 4412A HM4412A SOP8 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit...