N-Channel Enhancement Mode Power MOSFET
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N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The+0 uses advanced trench technology and design t...
Description
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N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The+0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
●VDS =30V,ID =A RDS(ON) < mΩ @ VGS=10V RDS(ON) < mΩ @ VGS=5V
● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current
Application
● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
Schematic diagram
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Marking and pin Assignment
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
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SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Drain-Source Voltage Gate-Source Voltage
Parameter
Symbol VDS VGS
Limit
30 ±20
Drain Current-Continuous
ID 27
Drain Current-Continuous(TA=100℃) Pulsed Dr...
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