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HM4302

H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET

+0 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The+0 uses advanced trench technology and design t...


H&M Semiconductor

HM4302

File Download Download HM4302 Datasheet


Description
+0 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The+0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ●VDS =30V,ID =A RDS(ON) < mΩ @ VGS=10V RDS(ON) < mΩ @ VGS=5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Schematic diagram +0 Marking and pin Assignment SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package +0 +0 SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Parameter Symbol VDS VGS Limit 30 ±20 Drain Current-Continuous ID 27 Drain Current-Continuous(TA=100℃) Pulsed Dr...




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