HM4450A
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM4450A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
●VDS =40V,ID =8.0A RDS(ON) < 22mΩ @ VGS=10V RDS(ON) < 35mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson ● Fully ...
