HM4260

HM4260 N-Channel Enhancement Mode Power MOSFET Description The HM4260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =19A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability HM4260 Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package HM4260 HM4260 SOP-8 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter ...