N-Channel Enhancement Mode Power MOSFET
Description
The HM4486A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =100V,ID =4A RDS(ON) < 90mΩ @ VGS=10V (Typ:75mΩ) RDS(ON) < 100mΩ @ VGS=4.5V (Typ:80mΩ)
● High density cell design for ultra low R...
