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HM4454

H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET

HM4454 N-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology and design to pro...


H&M Semiconductor

HM4454

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Description
HM4454 N-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =8A RDS(ON) < 28mΩ @ VGS=10V (Typ:22mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Schematic diagram Application ● DC/DC Primary Side Switch ● Telecom/Server ● Synchronous Rectification Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package +0 +0 SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed...




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