HM4490

HM4490 N-Channel Enhancement Mode Power MOSFET Description The HM4490 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =200V,ID =3.9A RDS(ON) < 79mΩ @ VGS=10V （Typ：56mΩ） ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Schematic diagram HM4490 Marking and pin assignment 100% ∆Vds TESTED! SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package HM4490 HM4490 SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID ...