N-Channel Enhancement Mode Power MOSFET
Description
The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche...
