HM2300DR

HM2300DR N-Channel Enhancement Mode Power MOSFET Description The HM2300DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. General Features ● VDS = 20V,ID = 8.0A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Battery protection ●Load switch ●Power management D G S Schematic diagram DFN2X2-6L bottom view Package Marking and Ordering Information Device Marking Device Device Package 2300 HM2300 DR DFN2X2-6L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA =25℃ TA =70℃ ID Drain Current-Pulsed (Note 1) IDM Ma...