AP8205

AP8205 Rev.D Nov.-2016 DATA SHEET / Descriptions SOT23-6 N MOS 。N-channel Double MOSFET in a SOT23-6 Plastic Package. / Features ， RDS(on)，， 2.5V。 advanced trench technology to provide excellent RDS(on), low gate charge and operation with gate voltages as low as 2.5V. / Applications ，。 Use as a Battery protection , Switching application. / Equivalent Circuit **** / Pinning 1 2 3 6 5 4 / Marking Marking 8205 1/6 AP8205 Rev.D Nov.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Drain-Source Voltage Drain Current - Continuous Drain Current - Continuous Drain Current – Pulsed Gate-Source Voltage Maximum Power Dissipation Thermal Resistance Junction-to-Ambient Junction Temperature Storage Temperature Range S...