AOC2800
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Product Summary
The ...
AOC2800
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
Product Summary
The AOC2800 uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration.
Vss ID (at VGS=4.5V) RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=4.0V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V)
30V 6A < 42mΩ < 44mΩ < 49mΩ < 61mΩ
WLCSP 1.57x1.57_4
Bottom View
G2 S2 G1 S1
Top View Pin1(S1)
Equivalent Circuit
D1 D2
G1 G2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Source-Source Voltage
VSS
Gate-Source Voltage Source Current (DC) Note1 Source Current (Pulse) Note2
TA=25°C
VGS IS ISM
Power Dissipation Note1 TA=25°C Junction and Storage Temperature Range Note 1. Mounted on minimum pad ...
