AON1606

AON1606 20V N-Channel MOSFET General Description Product Summary The AON1606 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ideal for load switch applications. VDS ID (at VGS=4.5V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) RDS(ON) (at VGS =1.8V) Typical ESD protection 20V 0.7A < 275mΩ < 335mΩ < 390mΩ HBM Class 1C DFN 1.0x0.6 Top View Bottom View G S D G,S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current E TA=70°C Pulsed Drain Current C ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 0.7 0.55 2.8 0.9 0.55 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Ambient B t ≤ 10s Steady-State t ≤ 10s Steady-State Symbol RθJA RθJ...