KI2300

SMD Type N-Channel Enhancement MOSFET SI2300 (KI2300) MOSFIECT Features VDS=20V ID=5.0A RDS(ON)=25m @VGS=4.5V,ID=5.0A RDS(ON)=35m @VGS=2.5V,ID=4.0A RDS(ON)=55m @VGS=1.8V,ID=1.0A +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22..ESmiotutrecre 33..cDolrlaeicntor Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tj=125 Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 20 ±10 5.0 15 1.25 100 150 -55 to 150 Unit V A W /W www.kexin.com.cn 1 SMD Type SI2300 (KI2300) MOSFIECT Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage * Drain- Source on-state Resistance * Forward Transconductance * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge Drain-Source Diode Forward Current * Diode Forward Voltage * Pulse Test:Pulse Width 300 s,Duty Cycle Symbol Testconditions VDSS VGS=0V,ID=250uA IDSS VDS=20V,VGS=0V IGSS VGS= 10V,VDS=0V VGS(th) VGS=VDS,ID=250uA VGS=4.5V,ID=5.0A RDS(ON) VGS=2.5V,ID=4.0A VGS=1.8V,ID=1.0A gFS VDS=5V,ID=5A CISS...