SI2324

Features TrenchFET Power MOSFET Low RDS(ON) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) SI2324 N-Channel MOSFET Maximum Ratings Operating Junction Temperature Range: -55°C to +150°C Storage Temperature Range: -55°C to +150°C Thermal Resistance: 357°C/W Junction to Ambient Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed(Note 1) Symbol Rating Unit VDS 100 V VGS ±20 V ID 2.0 A IDM 8.0 A Internal Structure D G S 1. *$7E 2. 6285&( 3. '5$,1 Marking:S24 SOT-23 A D 3 12 F E CB G H J L K DIMENSIONS DIM INCHES MM MIN MAX MIN MAX A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 G 0.0004 0.006 0.01 0.15 H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.007 0.020 0.20 0.50 NOTE Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 2.000 inches mm 0.037 0.950 0.037 0.950 Rev.3-1-01012019 1/4 MCCSEMI.COM SI2324 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Static Characteristics Symbol Test conditions Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA Gate-Threshold Voltage(Note 2) VGS(th) VDS=VGS, ID=250µA Gate-Body Leakage C...