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AO4444L
80V N-Channel MOSFET SDMOS TM
General Description
The AO4444L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V)
100% UIS Tested 100% Rg Tested
80V 11A
< 12mΩ
< 14.5mΩ
Top View
D D D D
SOIC-8 Bottom View
D
G S S S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM IAS, IAR EAS, EAR
TA=25°C Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum 80 ±25 11 9 80 45 101 3.1 2
-55 to 150
S
Thermal Characteristics
Paramete.