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New Product
P-Channel 8 V (D-S) MOSFET
Si1315DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) -8
RDS(on) () 0.336 at VGS = - 4.5 V 0.450 at VGS = - 2.5 V 0.650 at VGS = - 1.8 V
ID (A)c - 0.9 - 0.7 - 0.5
Qg (Typ.) 1 nC
SOT-323 SC-70 (3-LEADS)
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Load Switch for Portable Devices • DC/DC Converters
G1
S
S2
3D
G
Top View Si1315DL (LJ)* * Marking Code
Ordering Information: Si1315DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 70 °C TA = 25 °C TA = 70 °C
ID IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C TC = 25 °C
IS
Maximum Power Dissipation
TC = 70 °.