P-ChannelEnhancement Mode Power MOSFET
SI2333
P-ChannelEnhancement Mode Power MOSFET
General Features
● VDS = -12V,ID = -6A RDS(ON) < 45mΩ @ VGS=-2.5V RDS(ON) ...
Description
SI2333
P-ChannelEnhancement Mode Power MOSFET
General Features
● VDS = -12V,ID = -6A RDS(ON) < 45mΩ @ VGS=-2.5V RDS(ON) < 30mΩ @ VGS=-4.5V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Application
● PWM applications ● Load switch ● Power management
D
SOT-23-3L
GS
REF.
A B C D E
F
Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50
0 0.10
0.45 0.55
REF.
G H K J L
M
Millimete
Min. 1.90 1.00 0.10 0.40 0.85
Max. REF.
1.30 0.20
1.15
0° 10°
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous Drain Current -Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range
Symbol VDS VGS ID IDM PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
...
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