Si2319

Features ·Low On resistance. ·-4.5V drive. ·RoHS compliant. Si2319 P-Channel Enhancement MOSFET Si2319 Halogen-Free Product Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) Ratings -40 +20 -4.4 -20 0.25 0.3 150 -55~+150 Unit V V A A W W 0C 0C Electrical Characteristics at Ta=250C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(th) RDS(ON) RDS(ON) Ciss Coss Crss Con...