SI2309

MOSFET P-Channel 60-V(D-S) MOSFET SI2309 Features ◆ TrenchFET Power MOSFET ◆ RoHS Compliant Absolute Maximum Ratings Ta=25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current(TJ=150℃) *1,2 TA=25℃ TA=100℃ VGS ID Pulsed Drain Current IDM Avalanche Current Power Dissipation*1,2 L = 0.1 mH TA=25℃ TA=70℃ IAS PD Operating Junction and Storage Temperature Range Tj.Tstg Maximum Junction-to-Ambient*2 RthJA Maximum Junction-to-Ambient*3 *1. Pulse Width limited by maximum junction temperature. *2. Surface Mounted on FR4 Board, t≤5sec. *3. Surface Mounted on FR4 Board. Rating -60 ±20 -1.25 -0.85 -8 -5 1.25 0.8 -55 to 150 145 175 Unit V V A A A W ℃ ℃/W www.canctech.com Revision 2016/8/15 @2016-2017 CCSemi . MOSFET Electrical Characteristics Ta=25℃ Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Symbol V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Cu...