IRF7404QPBF

END OF LIFE IRF7404QPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free S1 S2 S3 G4 8 7 6 5 Top View Description These HEXFET® Power MOSFET's in package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. A D D VDSS = -20V D D RDS(on) = 0.040Ω SO-8 Base part number Orderable part number Package Typ...