Si4491EDY

New Product P-Channel 30 V (D-S) MOSFET Si4491EDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.0065 at VGS = - 10 V - 30 0.0082 at VGS = - 6 V 0.0112 at VGS = - 4.5 V ID a Qg (Typ.) - 29 - 23 66 nC - 20 SO-8 S1 S2 S3 G4 Top View 8D 7D 6D 5D FEATURES Extended VGS range (± 25 V) for adaptor switch applications Extremely low RDS(on) TrenchFET® Power MOSFET 100 % Rg and UIS Tested Typical ESD Performance: 4000 V (HBM) Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Adaptor Switch, Load Switch Power Management Notebook Computers and Portable Battery Packs G S Ordering Information: Si4491EDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID ...